• DocumentCode
    3556298
  • Title

    A new flash E2PROM cell using triple polysilicon technology

  • Author

    Masuoka, Fujio ; Asano, Masamichi ; Iwahashi, Hiroshi ; Komuro, Teisuke ; Tanaka, Shinichi

  • Author_Institution
    Toshiba Corp. Kawasaki, Japan
  • Volume
    30
  • fYear
    1984
  • fDate
    1984
  • Firstpage
    464
  • Lastpage
    467
  • Abstract
    A new Flash Electrically Erasable-PROM cell with single transistor per bit as same as conventional UV-EPROM(1) (2) and suitable for 256K bit F-E2PROM with rather conservative 2.0µm design rule is described. The cell is programmed by a channel hot carrier injection mechanism similar to EPROM. The contents of all memory cells are simultaneously erased by using field emission of electrons from a floating gate to an erase gate in a flash. The F-E2PROM cell with single transistor per bit consists of three layers of polysilicon with select transistor. (3) (4) (5) Programming is 10msec per bit as same as UV-EPROM. Good erasing characteristics is obtained with 550Å of oxide thickness between floating gate and erase gate.
  • Keywords
    Circuit testing; EPROM; Electron emission; Hot carrier injection; Nonvolatile memory; PROM; Plastic packaging; Size control; Thickness control; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1984 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1984.190752
  • Filename
    1484523
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556298