• DocumentCode
    3556300
  • Title

    A shielded substrate injector MOS (SSIMOS) EEPROM cell

  • Author

    Stewart, R.G. ; Ipri, A.C. ; Faraone, L. ; Cartwright, J. ; Schlesier, K.

  • Author_Institution
    RCA Laboratories, Princeton, NJ
  • Volume
    30
  • fYear
    1984
  • fDate
    1984
  • Firstpage
    472
  • Lastpage
    475
  • Abstract
    An efficient, low voltage EEPROM cell is described which occupies an area of 135 µm2. The device uses Fowler-Nordheim tunneling of electrons between the floating gate and the device channel region and positions the control gate to shield the remaining portion of the floating gate from the substrate. The cell can be programmed in 10 ms with a nominal write voltage of 16V and erase voltage of 12V. The write/erase endurance of the cell is in excess of 500,000 cycles and the read retention has been shown to be greater than 10 years.
  • Keywords
    Capacitance; EPROM; Electrons; Fabrication; Laboratories; Low voltage; MOS capacitors; MOSFETs; Nonvolatile memory; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1984 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1984.190754
  • Filename
    1484525
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556300