DocumentCode :
3556302
Title :
Endurance model for textured-poly floating gate memories
Author :
Wegener, H.A.Richard
Author_Institution :
Xicor. Inc., Milpitas, California
Volume :
30
fYear :
1984
fDate :
1984
Firstpage :
480
Lastpage :
483
Abstract :
Textured Poly Floating Gate (TPFG) memories are beginning to dominate the commercial market. This is due to many of its inherent strengths. One of these is the consistency of its endurance. Its predictability is here developed theoretically. Starting with a model of emission from bumps based on the radial solutions of LaPlace´s and Poisson´s equation in spherical coordinates and the use of an Extreme Value distribution for the bump radii, an expression for charge build-up at constant current fits experimental data very well. This charge build-up is proportional to fluence. When these results are used in a model for continuous data changes, an expression is developed that relates endurance exponentially to a ratio of internal voltages.
Keywords :
Anodes; Cathodes; Dielectrics; Electron emission; Electron traps; Nonvolatile memory; Poisson equations; Surface texture; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1984 International
Type :
conf
DOI :
10.1109/IEDM.1984.190756
Filename :
1484527
Link To Document :
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