Improved high power twin channel laser with blocking layer

There is currently an urgent need for a GaAlAs/GaAs semiconductor laser having peak power capability of greater than one watt and CW power of 200 mW. These specifications can be met only with multi-element, array-type structures. We present an improved version of the twin channel laser as a prototype for a new concept in semiconductor laser array structures. The laser device constitutes the first array structure on a p-type GaAs substrate using current-blocking layers and yields improved current utilization and efficiency over previous structures.