Title :
Monolithic integration of a quantum-well laser and a driver circuit on a GaAs substrate
Author :
Wada, O. ; Sanada, T. ; Yamakoshi, S. ; Hamaguchi, H. ; Fujii, T. ; Horimatsu, T. ; Sakurai, T.
Author_Institution :
Fujitsu Limited, Atsugi, Japan
Abstract :
An AlGaAs/GaAs graded-index waveguide separate-confinement heterostructure (GRIN -SCH) laser and a laser driver circuit composed of four GaAs MESFET´s have been monolithically integrated on a semi-insulating GaAs substrate. The integrated GRIN-SCH laser exhibited excellent cw operation characteristics with the threshold current of 15 mA and the differential quantum efficiency of 50%. Measurements of the circuit have confirmed high-sensitivity (4.3 mW/V/facet) and fast-response (400 ps turn-on time) performance of the present monolithic transmitter.
Keywords :
Driver circuits; Gallium arsenide; Integrated circuit measurements; MESFET integrated circuits; Monolithic integrated circuits; Quantum well lasers; Threshold current; Time measurement; Transmitters; Waveguide lasers;
Conference_Titel :
Electron Devices Meeting, 1984 International
DOI :
10.1109/IEDM.1984.190768
