Characterization of double heterojunction GaAs/AlGaAs hot electron transistors

A tunneling hot electron transistor (HET) using MBE GaAs/AlGaAs double heterojunctions has been demonstrated. This device uses a selective n⁺-GaAs growth technique for forming ohmic base contacts. The common-emitter current gain was measured as 1.3 at 40K. This paper covers the operation principles of the HET (reflecting hot electron transfer mechanisms) and projects performance of this device using a Monte Carlo method.