A new p-channel MOSFET structure with Schottky-clamped source and drain

New p-channel Schottky-Clamped MOSFET´S (SCMOSFET´S) whose source and drain junctions are composed of PtSi Schottky diodes shunted with very small p-n diodes are proposed. The proposed transistors can be fabricated either by silicon V-groove etching or by using boron-doped sidewall oxides. The proposed devices take full advantages of the p-channel Schottky MOSFET while eliminating the problems associated with the Schottky source/drain region, such as low breakdown voltages, high leakage current and a significant reduction of drain current. Moreover, SCMOSFET´s reduce the latchup sensitivity in CMOS circuits without any significant increase in technological complexity.