DocumentCode
3556341
Title
Scaling of compensated MOSFETs towards submicron dimensions
Author
Klaassen, F.M. ; Bastiaens, J.J. ; Hes, W. ; Sprokel, M.
Author_Institution
Philips Research Laboratories, Eindhoven, The Netherlands
Volume
30
fYear
1984
fDate
1984
Firstpage
613
Lastpage
616
Abstract
The punch-through and turn-on mechanism of a compensated MOSFET are analyzed and compared with measured subthreshold characteristics. On this basis it is argued that the approach for scaling down p-channel MOSFETs in CMOS-VLSI is different from that of n-channel devices. Satisfactory operation of 0.5 µm devices is demonstrated.
Keywords
CMOS process; Doping; Hot carrier effects; Insulation; Laboratories; MOSFETs; Neodymium; Physics; Threshold voltage; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1984 International
Type
conf
DOI
10.1109/IEDM.1984.190796
Filename
1484567
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