Title :
Scaling of compensated MOSFETs towards submicron dimensions
Author :
Klaassen, F.M. ; Bastiaens, J.J. ; Hes, W. ; Sprokel, M.
Author_Institution :
Philips Research Laboratories, Eindhoven, The Netherlands
Abstract :
The punch-through and turn-on mechanism of a compensated MOSFET are analyzed and compared with measured subthreshold characteristics. On this basis it is argued that the approach for scaling down p-channel MOSFETs in CMOS-VLSI is different from that of n-channel devices. Satisfactory operation of 0.5 µm devices is demonstrated.
Keywords :
CMOS process; Doping; Hot carrier effects; Insulation; Laboratories; MOSFETs; Neodymium; Physics; Threshold voltage; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1984 International
DOI :
10.1109/IEDM.1984.190796
