• DocumentCode
    3556343
  • Title

    Two-dimensional MOSFET simulation with energy transport phenomena

  • Author

    Fukuma, Masumi ; Uebbing, R.H.

  • Author_Institution
    NEC Corp.
  • Volume
    30
  • fYear
    1984
  • fDate
    1984
  • Firstpage
    621
  • Lastpage
    624
  • Abstract
    A two dimensional energy transport oriented MOSFET simulator was developed which is based on Boltzmann transport equation with relaxation time approximation. Full two dimensional energy distribution was stably calculated by introducing several algorithms. It is useful for discussing hot carrier effects in short channel MOSFETs. It was predicted that, even in Si, velocity overshooting effects are important in determining MOSFET characteristics, when Leffis less than 0.25µm.
  • Keywords
    Boltzmann equation; Energy conservation; MOSFET circuits; Maxwell equations; Microelectronics; Monte Carlo methods; Optical scattering; Poisson equations; Scattering parameters; Steady-state;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1984 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1984.190798
  • Filename
    1484569
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556343