• DocumentCode
    3556346
  • Title

    Silicon nitride films by plasma-CVD from SiH4-N2and SiF4-N2-H2gas mixtures

  • Author

    Fujita, Shizuo ; Zhou, Nan-Sheng ; Toyoshima, Hideo ; Ohishi, Toshiyuki ; Sasaki, Akio

  • Author_Institution
    Kyoto University, Kyoto, Japan
  • Volume
    30
  • fYear
    1984
  • fDate
    1984
  • Firstpage
    630
  • Lastpage
    633
  • Abstract
    Silicon nitride films were prepared by plasma-CVD from SiH4-N2and SiF4-N2-H2gas mixtures. These films exhibited lower hydrogen concentration and higher thermal endurance than those of the films deposited from the conventional SiH4-NH3gas mixture. Improved characteristics as encapsulant of MOSFET´s and as diffusion and annealing masks suggest usefulness of these films in the field of modern microelectronics processing.
  • Keywords
    Etching; Hydrogen; MOSFET circuits; Optical films; Plasma applications; Plasma properties; Plasma temperature; Semiconductor films; Silicon compounds; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1984 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1984.190801
  • Filename
    1484572
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556346