Title :
Silicon nitride films by plasma-CVD from SiH4-N2and SiF4-N2-H2gas mixtures
Author :
Fujita, Shizuo ; Zhou, Nan-Sheng ; Toyoshima, Hideo ; Ohishi, Toshiyuki ; Sasaki, Akio
Author_Institution :
Kyoto University, Kyoto, Japan
Abstract :
Silicon nitride films were prepared by plasma-CVD from SiH4-N2and SiF4-N2-H2gas mixtures. These films exhibited lower hydrogen concentration and higher thermal endurance than those of the films deposited from the conventional SiH4-NH3gas mixture. Improved characteristics as encapsulant of MOSFET´s and as diffusion and annealing masks suggest usefulness of these films in the field of modern microelectronics processing.
Keywords :
Etching; Hydrogen; MOSFET circuits; Optical films; Plasma applications; Plasma properties; Plasma temperature; Semiconductor films; Silicon compounds; Substrates;
Conference_Titel :
Electron Devices Meeting, 1984 International
DOI :
10.1109/IEDM.1984.190801
