Title :
Elevated source/drain MOSFET
Author :
Wong, S.S. ; Bradbury, D.R. ; Chen, D.C. ; Chiu, K.Y.
Author_Institution :
Hewlett-Packard Laboratories, Palo Alto, California
Abstract :
The fabrication of both n- and p-channel MOSFET´s with the souce/drain regions elevated above the electrical channel is described. The realization of effective shallow junctions is demonstrated and the device properties are compared to those of conventional MOSFET´s.
Keywords :
Boron; Electrostatic discharge; Epitaxial growth; Etching; Fabrication; Implants; Leakage current; MOSFET circuits; Silicides; Silicon;
Conference_Titel :
Electron Devices Meeting, 1984 International
DOI :
10.1109/IEDM.1984.190802
