DocumentCode :
3556362
Title :
A 2 micron high performance bipolar 64K ECL static RAM technology with 200 square microns contactless memory cell
Author :
Vora, M. ; Chien, F. ; Burton, G. ; Koh, Y.B. ; Brown, R. ; Herndon, W. ; Heald, R.
Author_Institution :
Fairchild Research Center, Palo Alto, CA
Volume :
30
fYear :
1984
fDate :
1984
Firstpage :
690
Lastpage :
693
Abstract :
Small semiconductor memories with READ/ WRITE times of less than 15 ns have typically been bipolar ECL devices. The densest such chip possible with a state-of-the art process such as 2 micron Isoplanar has been a 16K ECL RAM with a cell size of 600 to 800 square microns (Ref. 1). In order to make a practical 64K ECL RAM with 2 micron layout rules, cell size has to be less than 200 square microns. This new technology has been developed which meets the memory cell size requirement while maintaining performance.
Keywords :
Anodes; Planarization; Random access memory; Read-write memory; Resistors; Semiconductor diodes; Silicides; Strips; Surface topography; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1984 International
Type :
conf
DOI :
10.1109/IEDM.1984.190817
Filename :
1484588
Link To Document :
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