Title :
180V analog-compatible, high-speed logic utilizing semi-well isolation technology
Author :
Okabe, T. ; Kimura, Mizue ; Shimizu, I. ; Nagai, Y. ; Nagata, M.
Author_Institution :
Hitachi Ltd., Kokubunji, Tokyo
Abstract :
A new high-voltage LSI fabrication technique realizing a push-pull output circuit with compact low-power and high-speed logic has been developed. The unique feature of this technique is that it provides compatibility for high-voltage devices with low-power IIL and high-speed Complementary Schottky Transistor Logic(CSTL) on a single chip by using an improved Semi-Well Isolation structure. As a result, logic circuits having minimum propagation delay times of 35ns/gate for IIL and 2ns/gate for CSTL were realized on the same chip with 180V devices.
Keywords :
Conductivity; Electric variables; Epitaxial layers; Fabrication; Isolation technology; Large scale integration; Logic circuits; Logic devices; Plasma displays; Substrates;
Conference_Titel :
Electron Devices Meeting, 1984 International
DOI :
10.1109/IEDM.1984.190819