Title :
New pseudo-quaternary GaInAsP semiconductors: A high speed "High-low" avalanche photodiode with Ga0.47In0.53As/InP graded gap superlattice
Author :
Capasso, F. ; Cox, H.M. ; Hutchinson, A.L. ; Olsson, N.A. ; Hummel, S.G.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, NJ
Abstract :
We have demonstrated a pseudo-quaternary GaInAsP semiconductor consisting of a graded gap Ga0.47In0.53As/InP superlattice. This new superlattice has been used to eliminate the pile-up effect of holes in a "high-low" InP/Ga0.47In0.53As avalanche photodiode, without growing of a separately lattice-matched Ga1-xInxAS1-yPylayer. Psuedo-quaternary semiconductors represent a new technique of growing GaInAsP and can conveniently replace conventional Ga1-xInxAS1-yPyalloys in many device applications.
Keywords :
Absorption; Avalanche photodiodes; Indium phosphide; Lattices; Metallic superlattices; Optical pulses; Photonic band gap; Power lasers; Pulse measurements; Semiconductor superlattices;
Conference_Titel :
Electron Devices Meeting, 1984 International
DOI :
10.1109/IEDM.1984.190826
