• DocumentCode
    3556372
  • Title

    Fully optical and electrically interfaced, monolithic 1 × 12 array of In0.53Ga0.47As/InP p-i-n photodiodes

  • Author

    Brown, M.G. ; Forrest, S.R. ; Hu, P.H.-S. ; Kaplan, D.R. ; Koza, M. ; Ota, Y. ; Potopowicz, J.R. ; Seabury, C.W. ; Washington, M.A.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, New Jersey
  • fYear
    1984
  • fDate
    9-12 Dec. 1984
  • Firstpage
    727
  • Lastpage
    728
  • Abstract
    We describe the fabrication of monolithically integrated, 1 × 12 arrays of In0.53Ga0.47As/InP photodiodes. These devices are fully electrically and optically interfaced, and are useful for fiber-optic system applications. The dark current of each diode at -5 V is 80% at 1.3 µm for the diodes. These are, to our knowledge, the first such devices made for use in long-wavelength, optical fiber systems.
  • Keywords
    Capacitance; Dark current; Indium phosphide; Optical arrays; Optical buffering; P-i-n diodes; PIN photodiodes; Packaging; Silicon; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1984 International
  • Conference_Location
    San Francisco, CA, USA
  • Type

    conf

  • DOI
    10.1109/IEDM.1984.190827
  • Filename
    1484598
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556372