DocumentCode :
3556379
Title :
A silicon bipolar transistor with a hydrogenated amorphous emitter
Author :
Ghannam, M. ; Nijs, J. ; Mertens, R. ; DeKeersmaecker, R.
Author_Institution :
Interuniversity Microelectronics Center, Heverlee, Belgium
Volume :
30
fYear :
1984
fDate :
1984
Firstpage :
746
Lastpage :
748
Abstract :
THE FIRST operating heterojunction bipolar transistor using a wide band gap phosphorus doped hydrogenated amorphous silicon emitter has been realized. The maximum common emitter current gain has a value of 14 while the base Gummel number amounts to 1.35 × 1013s/cm4.
Keywords :
Amorphous materials; Amorphous silicon; Bipolar transistors; Hydrogen; Laboratories; Photonic band gap; Plasma temperature; Radio frequency; Resistors; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1984 International
Type :
conf
DOI :
10.1109/IEDM.1984.190833
Filename :
1484604
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3556379
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