Title :
State-of-the-art of MOS modeling
Author :
Schütz, A. ; Werner, C.
Author_Institution :
Siemens AG, F.R. Germany
Abstract :
In this paper we survey the field of modern MOS-modeling. Methods, problems and benefits are discussed. Several kinds of approaches are presented and error mechanisms are outlined. Finally, some recent development based on the MINIMOS program will be sketched.
Keywords :
Analytical models; Circuit analysis computing; Circuit simulation; Computational efficiency; Electrons; Laboratories; Poisson equations; Predictive models; Threshold voltage; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1984 International
DOI :
10.1109/IEDM.1984.190839
