DocumentCode :
3556392
Title :
3-D SOI/CMOS
Author :
Nakano, Motoo
Author_Institution :
Fujitsu Limited, Kawasaki, Japan
Volume :
30
fYear :
1984
fDate :
1984
Firstpage :
792
Lastpage :
795
Abstract :
Three-dimensional (3-D) SOI/CMOS has been expected to be a novel structure which offers the possibilities of high packing density and high speed function. This paper summarizes some of the properties of 3-D SOI/CMOS such as fabricating processes, characteristics and practical structures.
Keywords :
CMOS integrated circuits; CMOS process; Crystallization; Heating; High speed integrated circuits; Impurities; Insulation; Silicon on insulator technology; Strips; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1984 International
Type :
conf
DOI :
10.1109/IEDM.1984.190846
Filename :
1484617
Link To Document :
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