Author_Institution :
Fujitsu Limited, Kawasaki, Japan
Abstract :
Three-dimensional (3-D) SOI/CMOS has been expected to be a novel structure which offers the possibilities of high packing density and high speed function. This paper summarizes some of the properties of 3-D SOI/CMOS such as fabricating processes, characteristics and practical structures.
Keywords :
CMOS integrated circuits; CMOS process; Crystallization; Heating; High speed integrated circuits; Impurities; Insulation; Silicon on insulator technology; Strips; Temperature;
Conference_Titel :
Electron Devices Meeting, 1984 International
DOI :
10.1109/IEDM.1984.190846
