DocumentCode :
3556395
Title :
Electrical characterisation of oxygen implanted silicon substrates
Author :
Foster, D J ; Butler, A.L. ; Bolbot, P H
Author_Institution :
Plessey Research (Caswell) Ltd., Northants, United Kingdom
Volume :
30
fYear :
1984
fDate :
1984
Firstpage :
804
Lastpage :
807
Abstract :
Results of an electrical assessment of CMOS SOI devices employing oxygen implanted silicon substrates are presented. Devices were fabricated directly into the implanted silicon with electrical characteristics dependent on the material properties. Electrically active oxygen gave rise to unintentional island doping. Silicon crystallinity as assessed by mobility measurements was related to oxygen implant temperature. By restricting the oxygen implant temperature to the range 460-510° C excellent CMOS device performance was obtained.
Keywords :
Conductivity; Crystallization; Doping; Implants; Leakage current; MOS devices; Metallization; Silicon; Substrates; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1984 International
Type :
conf
DOI :
10.1109/IEDM.1984.190849
Filename :
1484620
Link To Document :
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