Electrical characterisation of oxygen implanted silicon substrates

Results of an electrical assessment of CMOS SOI devices employing oxygen implanted silicon substrates are presented. Devices were fabricated directly into the implanted silicon with electrical characteristics dependent on the material properties. Electrically active oxygen gave rise to unintentional island doping. Silicon crystallinity as assessed by mobility measurements was related to oxygen implant temperature. By restricting the oxygen implant temperature to the range 460-510° C excellent CMOS device performance was obtained.