Title :
Device performances of a submicron SOI technology
Author :
Herve, Auberton A J ; Joly, J.P. ; Jeuch, P. ; Gautier, J. ; Hode, J.M.
Author_Institution :
LETI-IRDI - Commissariat à l´´Energie Atomique - LETI-CENG, Grenoble Cedex, France
Abstract :
A fully CMOS bulk compatible technology has been performed on laser zone melting recrystallized silicon on insulator. Using a seeding technique submicron MOS transistors (L = 0.3 µm to 3 µm) have been processed in a grain boundary-free SOI layer, showing back leackage current < 0.2 pA/µm channel width. A 101 stages ring oscillator allows to measure propagation delay per stage of 93 ps for a supply voltage of 5V.
Keywords :
Atom lasers; Atomic beams; Atomic layer deposition; CMOS technology; Circuit testing; Grain boundaries; Heating; MOSFETs; Ring lasers; Silicon on insulator technology;
Conference_Titel :
Electron Devices Meeting, 1984 International
DOI :
10.1109/IEDM.1984.190850
