DocumentCode :
3556414
Title :
Microwave performance of GaAs/(Ga,Al)As heterojunction bipolar transistors
Author :
Asbeck, P.M. ; Gupta, A.K. ; Ryan, F.J. ; Miller, D.L. ; Anderson, R.J. ; Liechti, C.A. ; Eisen, F.H.
Author_Institution :
Rockwell International Corporation, Thousand Oaks, CA
Volume :
30
fYear :
1984
fDate :
1984
Firstpage :
864
Lastpage :
865
Keywords :
Bipolar transistors; Circuit noise; Electrical resistance measurement; Frequency; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Low-frequency noise; Noise figure; Noise measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1984 International
Type :
conf
DOI :
10.1109/IEDM.1984.190868
Filename :
1484639
Link To Document :
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