DocumentCode :
3556453
Title :
A 1GHz-5mA/5V dual modulus GaAs prescaler IC
Author :
Maemura, K. ; Takahashi, T. ; Inoue, S. ; Mitsui, Y. ; Orisaka, S. ; Ishihara, O. ; Otsubo, M.
Author_Institution :
Mitsubishi Electric Corporation, Hyogo, Japan
Volume :
31
fYear :
1985
fDate :
1985
Firstpage :
94
Lastpage :
97
Abstract :
A 1GHz-5mA/5V 128/129 dual modulus GaAs prescaler IC has been developed by using a source coupled FET logic. A shallow n+implantation-layer and slightly recessed gate technology is used in fabricating the prescaler IC. The technology gives high transconductance and low source resistance, resulting in low dissipation current of the IC. The chip size is 1.77mm × 1.10mm. 231 FET´s, 85 diodes, 128 resistors and 2 capacitors are integrated in the chip. Extremely low IC current of 4.0mA is achieved with the maximum counting frequency fcmaxof 1.2GHz at a supply voltage VDDof 5.0V. The fcmaxof 1.8GHz is also obtained with the IC current of 9.3mA.
Keywords :
Electrodes; FET integrated circuits; Frequency synthesizers; Gallium arsenide; Integrated circuit interconnections; Logic; Parasitic capacitance; Phase locked loops; Switches; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1985 International
Type :
conf
DOI :
10.1109/IEDM.1985.190900
Filename :
1485450
Link To Document :
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