A novel MOS device structure with S/D contacts over oxide (COO)

A novel MOS device structure with S/D Contacts Over Oxide (COO) has been developed where the channel region is in a thin high-quality epitaxial Si layer while the S/D diffusion regions extend on top of thick insulating oxide to minimize S/D diffusion to substrate capacitance. All contacts to S/D diffusion are over insulating oxide thereby reducing contact area and eliminating any spiking problems associated with contacting shallow junctions. Processing details and results of electrical characterization of fabricated COO MOSFETs will be presented.