Title :
A 600 ° C process for MOSFET fabrication using microwave plasma-stream gate oxidation
Author :
Warabisako, T. ; Kimura, S. ; Tokuyama, T.
Author_Institution :
Hitachi Ltd., Kokubunji, Japan
Abstract :
Among the current Si LSI fabrication processes, gate oxidation is one which is hard to replace with any low temperature alternatives. A novel oxidation technique using microwave plasma-stream can provide a promising oxide film at reduced temperatures. Application of this technique to the gate oxidation of MOSFET´s together with the possibility of fabricating devices at as low as 600°C is discussed.
Keywords :
Diodes; Fabrication; MOSFET circuits; Oxidation; Plasma confinement; Plasma density; Plasma immersion ion implantation; Plasma temperature; Plasma waves; Substrates;
Conference_Titel :
Electron Devices Meeting, 1985 International
Conference_Location :
Washington, DC, USA
DOI :
10.1109/IEDM.1985.190934
