Microwave annealing for low temperature VLSI processing

The microwave annealing(MWA) has been found to effectively activate implanted dopants in silicon at a wafer temperature much lower than the melting point of aluminum (660 °C). The contact between aluminum and silicon can also be sintered producing a contact resistance as small as the value produced by the conventional furnace annealing. Characteristics of MOSFETs having a shallow junction fabricated with the MWA have shown possibility of low temperature processing for submicron VLSI devices.