Title :
Advanced analog CMOS technology
Author :
Brown, D. ; Chu, S. ; Kim, M. ; Gorowitz, B. ; Milkovic, M. ; Nakagawa, T. ; Vogelsong, T.
Author_Institution :
General Electric Company, Schenectady, New York
Abstract :
The emergence of fine geometry CMOS technology augmented with analog capability presents a powerful tool for the VLSI system designer. In this paper, the authors will review major milestones in the evolution of analog/CMOS technology. Included in this discussion will be an overview of the multilevel metal 1.2 micron analo-gechnology which incorporates molybdenum resistors and isolated metal-to-metal capacitors. The technical presentation will highlight the development of the isolated capacitor and its comparison to a two level polysilicon implementation. Performance data on various types of analog functions fabricated in this process will be presented.
Keywords :
CMOS analog integrated circuits; CMOS process; CMOS technology; Circuit noise; Circuit synthesis; Dielectric loss measurement; Geometry; Plasma temperature; Switched capacitor circuits; Voltage;
Conference_Titel :
Electron Devices Meeting, 1985 International
DOI :
10.1109/IEDM.1985.190946
