DocumentCode
3556509
Title
A novel structure amorphous SiC:H emitter HBT using low temperature process
Author
Sasaki, Kimihiro ; Furukawa, Seijiro ; Rahman, Mahmudur M.
Author_Institution
Tokyo Inst. of Tech., Yokohama, Japan
Volume
31
fYear
1985
fDate
1985
Firstpage
294
Lastpage
297
Keywords
Amorphous materials; Bipolar transistors; Crystallization; Cutoff frequency; Electron emission; Fabrication; Heterojunction bipolar transistors; Silicon carbide; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1985 International
Type
conf
DOI
10.1109/IEDM.1985.190955
Filename
1485505
Link To Document