Title :
A novel structure amorphous SiC:H emitter HBT using low temperature process
Author :
Sasaki, Kimihiro ; Furukawa, Seijiro ; Rahman, Mahmudur M.
Author_Institution :
Tokyo Inst. of Tech., Yokohama, Japan
Keywords :
Amorphous materials; Bipolar transistors; Crystallization; Cutoff frequency; Electron emission; Fabrication; Heterojunction bipolar transistors; Silicon carbide; Substrates; Temperature;
Conference_Titel :
Electron Devices Meeting, 1985 International
DOI :
10.1109/IEDM.1985.190955
