Title :
A model-base comparison: GaAs/GaAlAs HBT versus silicon bipolar
Author :
Kurata, Mamoru ; Katoh, Riichi ; Yoshida, Jiro ; Akagi, Junko
Author_Institution :
Toshiba Corporation, Kawasaki-shi, Japan
Abstract :
A pure model-base comparison is made between the GaAs/GaAlAs HBT and the silicon bipolar transistor for the high speed switching performance by utilizing a "physical" one-dimensional transistor model, a hybrid model to represent a real device structure, and our own circuit simulator to allow direct access to the physical model. Delay time versus power characteristics, as well as dynamic carrier profiles are demonstrated, with discussion about limiting factors for the switching speed.
Keywords :
Aluminum; Bipolar transistors; Circuit simulation; Delay effects; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Research and development; Semiconductor process modeling; Silicon;
Conference_Titel :
Electron Devices Meeting, 1985 International
DOI :
10.1109/IEDM.1985.190958
