Title :
DC and microwave performance of In0.53Ga0.47As-In0.52Al0.48As single quantum well MISFETS
Author :
Seo, K.S. ; Nashimoto, Y. ; Bhattacharya, P.K. ; Gleason, K.R.
Author_Institution :
The University of Michigan, Ann Arbor, Michigan
Abstract :
We have investigated the materials properties and device characteristics of a In0.53Ga0.47As MISFET grown by molecular beam epitaxy. This device has a semi-insulating In0.52Al0.48As layer to serve as the gate dielectric and can therefore be free of interface-related problems in conventional MISFETs using natural and grown oxides. Furthermore, the channel is formed by a 2-dimensional electron gas (2-DEG) in a quantum well. A d.c. transconductance of 130 mS/mm and unity gain cutoff frequency of 6.8 GHz were measured at room temperature in a 1.8 µm recessed-gate transistor.
Keywords :
Cutoff frequency; Dielectric devices; Dielectric measurements; Electrons; MISFETs; Material properties; Microwave devices; Molecular beam epitaxial growth; Temperature measurement; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1985 International
DOI :
10.1109/IEDM.1985.190963
