DocumentCode :
3556518
Title :
GaAs/GaAlAs high electron mobility transistors for analog-to-digital converter applications
Author :
Lee, C.P. ; Sheng, N.H. ; Lewis, H.F. ; Wang, H.T. ; Miller, D.L. ; Donovan, J.
Author_Institution :
Rockwell International, Thousand Oaks, CA
Volume :
31
fYear :
1985
fDate :
1985
Firstpage :
324
Lastpage :
327
Abstract :
The use of GaAs/GaAlAs high electron mobility transistors (HEMTs) for analog-to-digital converter applications has been studied. HEMTs have shown superior device stability and uniformity to those of GaAs MESFETs. Because of the buried channel conduction and the control of MBE layers, HEMTs are suitable for high speed and high resolution ADCs. 5-bit ADCs, 5-bit DACs, and timing and control circuits, all built with HEMTs, have been demonstrated. A waveform reconstruction using these three chips has been performed at 140 Mega samples per second with 4-bit accuracy.
Keywords :
Analog-digital conversion; Circuit stability; Electrons; Frequency; Gallium arsenide; HEMTs; MESFETs; MODFETs; Temperature dependence; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1985 International
Type :
conf
DOI :
10.1109/IEDM.1985.190964
Filename :
1485514
Link To Document :
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