DocumentCode :
3556539
Title :
Process and device considerations for micron and submicron CMOS technology
Author :
Parrillo, Louis C.
Author_Institution :
Motorola, Inc., Austin, Texas
Volume :
31
fYear :
1985
fDate :
1985
Firstpage :
398
Lastpage :
402
Abstract :
CMOS has emerged as the most important technology for VLSI, and soon VLSI, circuits. This paper will address some of the major technical issues and approaches used in designing state-of-the-art CMOS devices. These topics include the formation of the body for each type of device, the electrical isolation between the two types of devices, the active-device design, and latchup prevention techniques.
Keywords :
Boron; CMOS process; CMOS technology; Circuits; Doping; Implants; Isolation technology; MOS devices; Space charge; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1985 International
Type :
conf
DOI :
10.1109/IEDM.1985.190985
Filename :
1485535
Link To Document :
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