Title :
Deep-depletion CCDs with improved UV sensitivity
Author :
Bosiers, J.T. ; Saks, N.S. ; Michels, D.J. ; McCarthy, D. ; Peckerar, M.C.
Author_Institution :
Sachs-Freeman Associates, Inc., Landover, MD
Abstract :
This paper presents results obtained on backside-illuminated deep-depletion CCDs developed for ultra-violet (UV) and X-ray imaging. Through appropriate backside treatments the CCD structure was optimized for high quantum efficiency in the UV-region of the spectrum. At 1216Å, where the photon absorption length is very short (∼70Å), a maximum quantum efficiency of 16-20% was obtained on the best devices as compared with less than 1% efficiency for devices without backside treatment.
Keywords :
Aluminum; Annealing; Charge coupled devices; Electromagnetic wave absorption; Implants; Laboratories; Optical imaging; Silicon; Surface charging; Virtual manufacturing;
Conference_Titel :
Electron Devices Meeting, 1985 International
DOI :
10.1109/IEDM.1985.190998
