Title :
Planar InGaAs/InP photodiodes grown by metalorganic chemical vapor deposition
Author :
Dupuis, R.D. ; Campbell, J.C. ; Velebir, J.R.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, New Jersey
Abstract :
Planar InGaAs/InP heterostructure photodiodes have been fabricated from structures grown by atmospheric pressure metalorganic chemical vapor deposition. Diffused p-n junction devices of 75µm diameter have low dark currents (∼20nA at -10V), good quantum efficiencies of ∼50% (without AR coatings), and very high speed response (∼35ps).
Keywords :
Chemical vapor deposition; Dark current; Indium gallium arsenide; Indium phosphide; MOCVD; Molecular beam epitaxial growth; P-n junctions; Photodiodes; Substrates; Zinc;
Conference_Titel :
Electron Devices Meeting, 1985 International
DOI :
10.1109/IEDM.1985.191003
