DocumentCode
3556586
Title
Quantum mechanical effects in very short and very narrow channel MOSFETs
Author
Antoniadis, D.A. ; Warren, A.C. ; Smith, Henry I.
Author_Institution
Massachusetts Institute of Technology, Cambridge, Massachusetts
Volume
31
fYear
1985
fDate
1985
Firstpage
558
Lastpage
561
Abstract
This paper discusses the quantum mechanical effects that are expected or have already been observed in ultra-small Si MOSFETs. These fall into two categories: effects related to lateral carrier confinement perpendicular to the direction of transport; and effects that result from transport across very small distances where the wave nature of the electron cannot be ignored.
Keywords
Carrier confinement; Electrons; Energy states; MOSFETs; Observability; Optical scattering; Particle scattering; Quantum mechanics; Temperature; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1985 International
Type
conf
DOI
10.1109/IEDM.1985.191032
Filename
1485582
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