DocumentCode :
3556598
Title :
A novel borophosphosilicate glass process
Author :
Fu, C.Y.
Author_Institution :
Xerox Palo Alto Research Center, Palo Alto, CA
Volume :
31
fYear :
1985
fDate :
1985
Firstpage :
602
Lastpage :
605
Abstract :
A novel low cost borophosphosilicate glass (BPSG) technology suitable for one micron processing is presented here. This technique allows glass to be flowed consistently and reproducibly at temperatures as low as 750°C. Flow angles are independent of device linewidths from 1 to 10 microns. The flow angle can be adjusted by changing the deposition time. The simplicity of the process will probably enhance the reliability of the technique. Related issues such as photoresist adhesion and plasma etching have been examined. Application of this material as an interlayer dielectric in MOS circuits looks promising.
Keywords :
Adhesives; Costs; Dielectric materials; Etching; Glass; Plasma applications; Plasma devices; Plasma materials processing; Plasma temperature; Resists;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1985 International
Type :
conf
DOI :
10.1109/IEDM.1985.191044
Filename :
1485594
Link To Document :
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