DocumentCode
3556598
Title
A novel borophosphosilicate glass process
Author
Fu, C.Y.
Author_Institution
Xerox Palo Alto Research Center, Palo Alto, CA
Volume
31
fYear
1985
fDate
1985
Firstpage
602
Lastpage
605
Abstract
A novel low cost borophosphosilicate glass (BPSG) technology suitable for one micron processing is presented here. This technique allows glass to be flowed consistently and reproducibly at temperatures as low as 750°C. Flow angles are independent of device linewidths from 1 to 10 microns. The flow angle can be adjusted by changing the deposition time. The simplicity of the process will probably enhance the reliability of the technique. Related issues such as photoresist adhesion and plasma etching have been examined. Application of this material as an interlayer dielectric in MOS circuits looks promising.
Keywords
Adhesives; Costs; Dielectric materials; Etching; Glass; Plasma applications; Plasma devices; Plasma materials processing; Plasma temperature; Resists;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1985 International
Type
conf
DOI
10.1109/IEDM.1985.191044
Filename
1485594
Link To Document