• DocumentCode
    3556609
  • Title

    A new programmable cell utilizing insulator breakdown

  • Author

    Sato, Noriaki ; Nawata, Takahiro ; Wada, Kunihiko

  • Author_Institution
    Fujitsu Limited, Kawasaki, Japan
  • Volume
    31
  • fYear
    1985
  • fDate
    1985
  • Firstpage
    639
  • Lastpage
    642
  • Abstract
    A new programmable cell called the Breakdown-of-Insulator-for-Conduction cell (BIC cell) has been proposed and developed. A BIC cell utilizes the electrical breakdown of an insulator for programming. A highly refined thin insulator, with a delta-function type of breakdown voltage distribution, is employed in the BIC cell. This cell can be programmed within 1 µsec, making it possible to realize the shortest programming time for PROM cells reported so far Programmed cell resistance is around 1×102ohms. Since a BIC cell has a stacked-cell structure, a PROM cell can be formed simply by merging a BIC cell with a MOSFET. Then, a PROM cell array can be formed from these cells. A programming method for a PROM cell array is discussed below.
  • Keywords
    Breakdown voltage; Dielectrics and electrical insulation; Electric breakdown; Electrodes; Functional programming; Fuses; MOSFET circuits; Merging; Microprocessors; PROM;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1985 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1985.191054
  • Filename
    1485604