DocumentCode :
3556609
Title :
A new programmable cell utilizing insulator breakdown
Author :
Sato, Noriaki ; Nawata, Takahiro ; Wada, Kunihiko
Author_Institution :
Fujitsu Limited, Kawasaki, Japan
Volume :
31
fYear :
1985
fDate :
1985
Firstpage :
639
Lastpage :
642
Abstract :
A new programmable cell called the Breakdown-of-Insulator-for-Conduction cell (BIC cell) has been proposed and developed. A BIC cell utilizes the electrical breakdown of an insulator for programming. A highly refined thin insulator, with a delta-function type of breakdown voltage distribution, is employed in the BIC cell. This cell can be programmed within 1 µsec, making it possible to realize the shortest programming time for PROM cells reported so far Programmed cell resistance is around 1×102ohms. Since a BIC cell has a stacked-cell structure, a PROM cell can be formed simply by merging a BIC cell with a MOSFET. Then, a PROM cell array can be formed from these cells. A programming method for a PROM cell array is discussed below.
Keywords :
Breakdown voltage; Dielectrics and electrical insulation; Electric breakdown; Electrodes; Functional programming; Fuses; MOSFET circuits; Merging; Microprocessors; PROM;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1985 International
Type :
conf
DOI :
10.1109/IEDM.1985.191054
Filename :
1485604
Link To Document :
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