DocumentCode :
3556616
Title :
Room temperature operation of high-performance AlAs/GaAs/AlAs resonant tunneling diodes with atomically controlled barrier width
Author :
Tsuchiya, M. ; Sakaki, H.
Author_Institution :
University of Tokyo, Tokyo, Japan
Volume :
31
fYear :
1985
fDate :
1985
Firstpage :
662
Lastpage :
665
Abstract :
The negative differential resistance (NDR) caused by resonant tunneling effect in AlAs/GaAs/AlAs double barrier heterostructures was systematically studied. The dependence of the resonant current on the barrier width was verified for the first time and shown to be applicable for designing device performances. In these diodes, the negative conductance can be designed to range from 
to 
Scm-2by varying the barrier width. One of these devices, which was optimumly designed, demonstrated a very large peak-to-valley ratio 2.3 at room temperature.
to Scm-2by varying the barrier width. One of these devices, which was optimumly designed, demonstrated a very large peak-to-valley ratio 2.3 at room temperature.Keywords :
Control systems; Diodes; Electrical equipment industry; Electrons; Gallium arsenide; Industrial control; Molecular beam epitaxial growth; Resonance; Resonant tunneling devices; Temperature control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1985 International
Type :
conf
DOI :
10.1109/IEDM.1985.191061
Filename :
1485611
Link To Document :
