DocumentCode :
3556635
Title :
Integrable high voltage CMOS: Devices, process application
Author :
Meyer, W. ; Dick, G.W. ; Olson, K.H. ; Lee, K.H. ; Shimer, J.A.
Author_Institution :
AT&T-Bell Laboratories, Reading, Pennsylvania
Volume :
31
fYear :
1985
fDate :
1985
Firstpage :
732
Lastpage :
735
Abstract :
A high voltage (HV) CMOS process has been developed. This process allows one to easily create junction isolated HVCMOS structures on the same chip with low voltage (LV) CMOS structures. The HV structures, which are realized in a 3.5µm CMOS technology were designed for and achieved 100V operation. The process allows for the isolation of LV and HV devices and circuits. The technology is suited for applications which require the marriage of LV analog and digital signal processing and control circuitry with HV output buffers and drivers.
Keywords :
CMOS process; CMOS technology; Circuits; Isolation technology; Laboratories; Low voltage; MOSFETs; Power supplies; Rails; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1985 International
Type :
conf
DOI :
10.1109/IEDM.1985.191080
Filename :
1485630
Link To Document :
بازگشت