مرکز منطقه ای اطلاع رساني علوم و فناوري - 1.3 µm Operation of Ge<sub>x</sub>Si<sub>1-x</sub>/Si strained-layer superlattice avalanche photodetectors

DocumentCode :

3556642

Title :

1.3 µm Operation of Ge_xSi_1-x/Si strained-layer superlattice avalanche photodetectors

Author :

Temkin, H. ; Pearsall, T.P. ; Bean, J.C. ; Olsson, N.A.

Author_Institution :

AT&T Bell Laboratories, Murray Hill, NJ

fYear :

1985

fDate :

1-4 Dec. 1985

Firstpage :

759

Lastpage :

760

Keywords :

Absorption; Artificial intelligence; Avalanche photodiodes; Buffer layers; Metallic superlattices; Metallization; Quantum well lasers; Voltage;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Electron Devices Meeting, 1985 International

Conference_Location :

Washington, DC, USA

Type :

conf

DOI :

10.1109/IEDM.1985.191087

Filename :

1485637

Link To Document :