DocumentCode :
3556646
Title :
Fabrication and properties of n-channel SiGe/Si modulation doped field-effect transistors grown by MBE
Author :
Daembkes, H. ; Herzog, H.-J. ; Jorke, H. ; Kibble, H. ; Kasper, E.
Author_Institution :
AEG Research Center Ulm, West Germany
Volume :
31
fYear :
1985
fDate :
1985
Firstpage :
768
Lastpage :
770
Keywords :
Buffer layers; Circuits; Doping; Epitaxial layers; FETs; Fabrication; Germanium silicon alloys; MESFETs; Silicon germanium; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1985 International
Type :
conf
DOI :
10.1109/IEDM.1985.191091
Filename :
1485641
Link To Document :
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