Title :
Fabrication and properties of n-channel SiGe/Si modulation doped field-effect transistors grown by MBE
Author :
Daembkes, H. ; Herzog, H.-J. ; Jorke, H. ; Kibble, H. ; Kasper, E.
Author_Institution :
AEG Research Center Ulm, West Germany
Keywords :
Buffer layers; Circuits; Doping; Epitaxial layers; FETs; Fabrication; Germanium silicon alloys; MESFETs; Silicon germanium; Substrates;
Conference_Titel :
Electron Devices Meeting, 1985 International
DOI :
10.1109/IEDM.1985.191091
