The SPT cell - A new substrate-plate trench cell for DRAMs
Author :
Lu, N. ; Cottrell, P. ; Craig, W. ; Dash, S. ; Critchlow, D. ; Mohler, R. ; Machesney, B. ; Ning, Ting ; Noble, W. ; Parent, R. ; Scheuerlein, R. ; Sprogis, E. ; Terman, L.
Author_Institution :
IBM Research Division, Yorktown Heights, New York
fYear :
1985
fDate :
1-4 Dec. 1985
Firstpage :
771
Lastpage :
772
Keywords :
CMOS technology; Capacitors; Electrodes; Fusion power generation; Implants; Parasitic capacitance; Random access memory; Silicides; Silicon; Surface topography;
