• DocumentCode
    3556666
  • Title

    Majority and minority carrier transport in polysilicon emitter contacts

  • Author

    Crabbé, E. ; Swirhun, S. ; Alamo, J. Del ; Pease, R.F.W. ; Swanson, R.M.

  • Author_Institution
    Stanford University, Stanford, California
  • Volume
    32
  • fYear
    1986
  • fDate
    1986
  • Firstpage
    28
  • Lastpage
    31
  • Abstract
    The minority hole transport in polysilicon emitter contacts has been studied with a novel pnp test transistor. Segregated arsenic at the polysilicon/silicon interface is mostly responsible for the base current reduction in polysilicon-contacted npn transistors. This improvement comes at a price of a higher emitter resistance. This resistance was measured with a Kelvin resistor structure and the base current/ emitter resistance trade-off is quantified.
  • Keywords
    Boron; Current measurement; Electrical resistance measurement; Electronic equipment testing; Kelvin; Laboratories; P-n junctions; Rapid thermal annealing; Silicon; Solid state circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1986 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1986.191102
  • Filename
    1486360
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556666