The hetrojunction amorphous n+(a-Si)/n-i-p(a-SiC)/i-n+(a-Si) phototransistor with high gain ( ∼ 40) and high speed ( ∼ 10 µ s)

In this report, a hetrojunction amorphous Si-SiC barrier transistor (a-HJBT) was successfully fabricated which revealed high gain (∼40) and high speed (∼10µs). The homojunction amorphous silicon bulk barrier phototransistor has been reported to be a high gain (∼12) and high speed (∼30µs) photosensing device. In this report, a significant improvement has been achieved by making a hetrojunction structure between the emitter and the base by a structure of n⁺(Si)/n-i-δp⁺(SiC) which is in contact with the i-n⁺(Si) collector layers. The structure was successfully made by plasma enhanced chemical vapor deposition (PECVD) on a glass substrate.