Title :
Properties of silicon oxide films grown in a microwave oxygen plasma
Author :
Roppel, T. ; Reinhard, D.K. ; Salbert, G.T. ; Asmussen, J.
Author_Institution :
Michigan State University, East Lansing, MI
Abstract :
Anodic oxidation of silicon in an oxygen plasma is a low temperature alternative to thermal oxidation. This report describes low-temperature oxide layers on silicon with MOS properties similar to those obtained by conventional high temperature oxidation. Oxides are grown in a 2.45 GHz microwave plasma disk reactor.
Keywords :
Inductors; Oxidation; Plasma properties; Plasma temperature; Predictive models; Semiconductor films; Silicon; Temperature distribution; Voltage;
Conference_Titel :
Electron Devices Meeting, 1986 International
DOI :
10.1109/IEDM.1986.191150
