• DocumentCode
    3556734
  • Title

    High-speed AlGaAs/GaAs HBTs with proton-implanted buried layers

  • Author

    Nakajima, Osaake ; Nagata, Koichi ; Yamauchi, Yoshiki ; Ito, Hiroshi ; Ishibashi, Tadao

  • Author_Institution
    NTT Electrical Communications Laboratories, Atsugi-shi, Kanagawa, Japan
  • Volume
    32
  • fYear
    1986
  • fDate
    1986
  • Firstpage
    266
  • Lastpage
    269
  • Abstract
    A new structure for AlGaAs/GaAs heteroJunction bipolar transistors (HBTs) using a buried proton-implanted external collector layer and a high doped base layer is proposed. This structure has been successfully applied to achieve high performance HBTs with a cutoff frequency, fT, up to 42 GHz and a maximuxm oscillation frequency, f_{\\max } , up to 65 GHz on a 2 µm × 5 µm emitter size HBT. The highest fTof 45 GHz and f_{\\max } of 70 GHz have also been independently observed for HBTs with other sizes.
  • Keywords
    Capacitance; Diodes; Doping; Electrodes; Etching; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Protons; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1986 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1986.191166
  • Filename
    1486424
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556734