DocumentCode :
3556734
Title :
High-speed AlGaAs/GaAs HBTs with proton-implanted buried layers
Author :
Nakajima, Osaake ; Nagata, Koichi ; Yamauchi, Yoshiki ; Ito, Hiroshi ; Ishibashi, Tadao
Author_Institution :
NTT Electrical Communications Laboratories, Atsugi-shi, Kanagawa, Japan
Volume :
32
fYear :
1986
fDate :
1986
Firstpage :
266
Lastpage :
269
Abstract :
A new structure for AlGaAs/GaAs heteroJunction bipolar transistors (HBTs) using a buried proton-implanted external collector layer and a high doped base layer is proposed. This structure has been successfully applied to achieve high performance HBTs with a cutoff frequency, fT , up to 42 GHz and a maximuxm oscillation frequency, 
, up to 65 GHz on a 2 µm × 5 µm emitter size HBT. The highest fT of 45 GHz and of 70 GHz have also been independently observed for HBTs with other sizes.
, up to 65 GHz on a 2 µm × 5 µm emitter size HBT. The highest f of 70 GHz have also been independently observed for HBTs with other sizes.Keywords :
Capacitance; Diodes; Doping; Electrodes; Etching; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Protons; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1986 International
Type :
conf
DOI :
10.1109/IEDM.1986.191166
Filename :
1486424
Link To Document :
