DocumentCode
3556739
Title
A resonant-tunneling bipolar transistor (RBT): A proposal and demonstration for new functional devices with high current gains
Author
Futatsugi, T. ; Yamaguchi, Y. ; Ishii, K. ; Imamura, K. ; Muto, S. ; Yokoyama, N. ; Shibatomi, A.
Author_Institution
Fujitsu Laboratories Ltd., Atsugi, Japan
Volume
32
fYear
1986
fDate
1986
Firstpage
286
Lastpage
289
Abstract
A resonant-tunneling bipolar transistor (RBT) using MBE GaAs/AlGaAs heterostructures has been proposed and fabricated. This device is a bipolar transistor using a quantum well resonator as a hot electron injector. The RBT exhibits a peaked collector-current characteristic with respect to the base-emitter voltage, due to the resonant-tunneling of electrons. The common-emitter current gain reaches 20 at 77K. The device also exhibits a peaked base-current characteristic due to the resonant-tunneling of holes. The measured resonant-tunneling voltages agree well with the simulation results.
Keywords
Bipolar transistors; Electrodes; Electron emission; Gallium arsenide; Gold; P-n junctions; Particle scattering; Proposals; Resonant tunneling devices; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1986 International
Type
conf
DOI
10.1109/IEDM.1986.191171
Filename
1486429
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