Title :
Quantum efficiency model for the CCD flash gate
Author :
Janesick, J. ; Campbell, Dave
Author_Institution :
Jet Propulsion Laboratory, Pasadena, California
Abstract :
A model is presented that predicts the quantum efficiency performance for the backside-illuminated CCD accumulated with a flash gate. Predicted values from this model are compared to experimental measurements taken from a flash gated CCD. We discuss critical CCD parameters used in the model that be controlled to achieve optimum response over a wide spectral range.
Keywords :
Capacitance; Charge coupled devices; Electric potential; Electron mobility; Equations; Interface states; Permittivity; Platinum; Silicon; Voltage;
Conference_Titel :
Electron Devices Meeting, 1986 International
DOI :
10.1109/IEDM.1986.191189
