• DocumentCode
    3556760
  • Title

    A new MOS image sensor operating in a non-destructive readout mode

  • Author

    Nakamura, T. ; Matsumoto, K. ; Hyuga, R. ; Yusa, A.

  • Author_Institution
    Olympus Optical Co. Ltd., Nagano, Japan
  • Volume
    32
  • fYear
    1986
  • fDate
    1986
  • Firstpage
    353
  • Lastpage
    356
  • Abstract
    In this paper, a new MOS image sensor, named a "Charge Modulation Device", is presented for the first time. This image sensor is characterized by a non-destructive readout operation and an amplification at each pixel level. A new device structure and circuit configuration, suitable for a high packing density array and high speed operation, are proposed. An image sensor of 210(H) × 165(V) pixels was fabricated and evaluated.
  • Keywords
    Charge carrier processes; High speed optical techniques; Image sensors; MOSFETs; Optical modulation; Optical sensors; Phototransistors; Pixel; Solid state circuits; TV;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1986 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1986.191190
  • Filename
    1486448
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556760