Title :
A new MOS image sensor operating in a non-destructive readout mode
Author :
Nakamura, T. ; Matsumoto, K. ; Hyuga, R. ; Yusa, A.
Author_Institution :
Olympus Optical Co. Ltd., Nagano, Japan
Abstract :
In this paper, a new MOS image sensor, named a "Charge Modulation Device", is presented for the first time. This image sensor is characterized by a non-destructive readout operation and an amplification at each pixel level. A new device structure and circuit configuration, suitable for a high packing density array and high speed operation, are proposed. An image sensor of 210(H) × 165(V) pixels was fabricated and evaluated.
Keywords :
Charge carrier processes; High speed optical techniques; Image sensors; MOSFETs; Optical modulation; Optical sensors; Phototransistors; Pixel; Solid state circuits; TV;
Conference_Titel :
Electron Devices Meeting, 1986 International
DOI :
10.1109/IEDM.1986.191190
