A 3GHz lateral PNP transistor

Using SICOS (sidewall contact structure) technology, a high speed lateral pnp transistor was fabricated and high cutoff frequency of 3GHz was obtained. This new lateral pnp transistor is comapatible with the vertical npn transistors without any additional fabrication steps. ECL ring oscillator constructed by SICOS lateral pnp transistors exhibited 216 psec/gate delay time. This delay time is comparable to the speed of modern ECL gates using isoplanar vertical npn transistors. High performace pnp transistors will increase the applicability of bipolar VLSIs.