The current status of silicon-on-insulator technologies - a comparison

This paper reviews the advantages of silicon-on-insulator (SOI) integrated circuits for a number of important application areas, placing particular emphasis on MOS technology. The most promising of the current contending techniques for substrate preparation, including oxygen ion implanted silicon (SIMOX), recrystallised polycrystalline silicon using the zone melting approach (ZMR), oxidised porous silicon, and epitaxial silicon-on-sapphire (SOS) are considered, and their current status in respect of materials properties, device and circuit performance are summarised.