• DocumentCode
    3556781
  • Title

    The current status of silicon-on-insulator technologies - a comparison

  • Author

    Partridge, S.L.

  • Author_Institution
    GEC Research Limited, Wembley, Middlesex
  • Volume
    32
  • fYear
    1986
  • fDate
    1986
  • Firstpage
    428
  • Lastpage
    430
  • Abstract
    This paper reviews the advantages of silicon-on-insulator (SOI) integrated circuits for a number of important application areas, placing particular emphasis on MOS technology. The most promising of the current contending techniques for substrate preparation, including oxygen ion implanted silicon (SIMOX), recrystallised polycrystalline silicon using the zone melting approach (ZMR), oxidised porous silicon, and epitaxial silicon-on-sapphire (SOS) are considered, and their current status in respect of materials properties, device and circuit performance are summarised.
  • Keywords
    Application specific integrated circuits; Dielectric substrates; Fabrication; Implants; Insulation; Integrated circuit technology; MOS devices; Oxidation; Semiconductor films; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1986 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1986.191210
  • Filename
    1486468
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556781